Synaptic behavior of Fe3O4-based artificial synapse by electrolyte gating for neuromorphic computing

Neuromorphic computing (NC) is a crucial step toward realizing power-efficient artificial intelligence systems. Hardware implementation of NC expected to overcome the challenges associated with conventional von Neumann computer architecture. Synaptic devices that can emulate rich functionalities biological synapses are emerging. Out several approaches, electrolyte-gated synaptic transistors have attracted enormous scientific interest owing their similar working mechanism. Here, we report three-terminal transistor based on Fe3O4 thin films, half-metallic spinel ferrite. We realized gate-controllable multilevel, non-volatile, and rewritable states for analog computing. Furthermore, emulated essential functions by applying electrical stimulus gate terminal device. This work provides new candidate platform ferrite-based future applications.